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High‐On/Off‐Ratio Graphene Nanoconstriction Field‐Effect Transistor
Author(s) -
Lu Ye,
Goldsmith Brett,
Strachan Douglas R.,
Lim Jong Hsien,
Luo Zhengtang,
Johnson A. T. Charlie
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201001324
Subject(s) - materials science , graphene , nanolithography , field effect transistor , transistor , optoelectronics , nanotechnology , fabrication , monolayer , negative impedance converter , voltage , electrical engineering , medicine , alternative medicine , engineering , pathology , voltage source
A method is reported to pattern monolayer graphene nanoconstriction field‐effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback‐controlled electromigration (FCE) to form a constriction in a gold etch mask that is first patterned using conventional lithographic techniques. The use of FCE allows the etch mask to be patterned on size scales below the limit of conventional nanolithography. The opening of a confinement‐induced energy gap is observed as the NCFET width is reduced, as evidenced by a sharp increase in the NCFET on/off ratio. The on/off ratios obtained with this procedure can be larger than 1000 at room temperature for the narrowest devices; this is the first report of such large room‐temperature on/off ratios for patterned graphene FETs.