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Record‐Low Inhomogeneous Broadening of Site‐Controlled Quantum Dots for Nanophotonics
Author(s) -
Mohan Arun,
Gallo Pascal,
Felici Marco,
Dwir Benjamin,
Rudra Alok,
Faist Jerome,
Kapon Eli
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201000341
Subject(s) - quantum dot , nanophotonics , chemical vapor deposition , materials science , photon , deposition (geology) , photoluminescence , optoelectronics , nanotechnology , quantum chemical , optics , molecule , physics , paleontology , sediment , biology , quantum mechanics
Large arrays of dense, site‐controlled InGaAs/GaAs quantum dots (QDs) are grown by organometallic chemical vapor deposition in an ordered pattern of tetrahedral recesses (pyramids). These QDs exhibit a low inhomogeneous broadening (≈1 meV), large s–p separation (>50 meV), and efficient single‐photon emission.