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Multilayer Stacked Low‐Temperature‐Reduced Graphene Oxide Films: Preparation, Characterization, and Application in Polymer Memory Devices
Author(s) -
Liu Juqing,
Lin Zongqiong,
Liu Tianjun,
Yin Zongyou,
Zhou Xiaozhu,
Chen Shufen,
Xie Linghai,
Boey Freddy,
Zhang Hua,
Huang Wei
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201000328
Subject(s) - graphene , materials science , oxide , sheet resistance , stacking , conductivity , hydrazine (antidepressant) , chemical engineering , polymer , electrode , nanotechnology , optoelectronics , composite material , layer (electronics) , organic chemistry , metallurgy , chemistry , chromatography , engineering
Highly reduced graphene oxide (rGO) films are fabricated by combining reduction with smeared hydrazine at low temperature (e.g., 100 °C) and the multilayer stacking technique. The prepared rGO film, which has a lower sheet resistance (≈160–500 Ω sq −1 ) and higher conductivity (26 S cm −1 ) as compared to other rGO films obtained by commonly used chemical reduction methods, is fully characterized. The effective reduction can be attributed to the large “effective reduction depth” in the GO films (1.46 µm) and the high C1s/O1s ratio (8.04). By using the above approach, rGO films with a tunable thickness and sheet resistance are achieved. The obtained rGO films are used as electrodes in polymer memory devices, in a configuration of rGO/poly(3‐hexylthiophene) (P3HT):phenyl‐C61‐butyric acid methyl ester (PCBM)/Al, which exhibit an excellent write‐once‐read‐many‐times effect and a high ON/OFF current ratio of 10 6 .