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Fullerene‐Derivative‐Embedded Nanogap Field‐Effect‐Transistor and Its Nonvolatile Memory Application
Author(s) -
Ryu SeongWan,
Kim ChungJin,
Kim Sungho,
Seo Myungsoo,
Yun Changhun,
Yoo Seunghyup,
Choi YangKyu
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200902410
Subject(s) - transistor , non volatile memory , materials science , field effect transistor , fullerene , nanotechnology , detector , derivative (finance) , field (mathematics) , channel (broadcasting) , optoelectronics , computer science , physics , electrical engineering , voltage , telecommunications , engineering , mathematics , quantum mechanics , financial economics , pure mathematics , economics
A nanogap field‐effect transistor with PCBM, a C 60 derivative, is demonstrated, and evidence for nanogap filling is provided. The transistor serves as a charge‐based detector to identify the imbibitions of the nanoscale capillary channel originating from the high‐electron receptivity of the PCBM. In an extended application, a 2‐bit‐per‐cell nonvolatile memory operation is performed, and the transistor is verified as a promising candidate without interference from adjacent memory cells.