Channel‐Length‐Dependent Field‐Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin‐Film Transistors | Zendy

Kobayashi Toshiyuki | Zendy; Kimura Nozomi | Zendy; Chi Junbin | Zendy; Hirata Shintaro | Zendy; Hobara Daisuke | Zendy

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Channel‐Length‐Dependent Field‐Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin‐Film Transistors

Author(s) -

Kobayashi Toshiyuki,

Kimura Nozomi,

Chi Junbin,

Hirata Shintaro,

Hobara Daisuke

Publication year - 2010

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.200902407

Subject(s) - nanosheet , graphene , materials science , field effect transistor , oxide , electrode , optoelectronics , transistor , electron mobility , thin film transistor , nanotechnology , layer (electronics) , voltage , chemistry , electrical engineering , engineering , metallurgy

Reduced graphene oxide thin‐film transistors exhibit unique channel‐length‐dependent field‐effect mobilities and carrier concentrations due to their structural and electronic properties. Increase in these characteristics with decreasing channel length is a consequence of the hopping transport from nanosheet to nanosheet and pinning of the Fermi energy at source and drain electrodes.

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