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Channel‐Length‐Dependent Field‐Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin‐Film Transistors
Author(s) -
Kobayashi Toshiyuki,
Kimura Nozomi,
Chi Junbin,
Hirata Shintaro,
Hobara Daisuke
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200902407
Subject(s) - nanosheet , graphene , materials science , field effect transistor , oxide , electrode , optoelectronics , transistor , electron mobility , thin film transistor , nanotechnology , layer (electronics) , voltage , chemistry , electrical engineering , engineering , metallurgy
Reduced graphene oxide thin‐film transistors exhibit unique channel‐length‐dependent field‐effect mobilities and carrier concentrations due to their structural and electronic properties. Increase in these characteristics with decreasing channel length is a consequence of the hopping transport from nanosheet to nanosheet and pinning of the Fermi energy at source and drain electrodes.