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Patterned Growth of Graphene over Epitaxial Catalyst
Author(s) -
Ago Hiroki,
Tanaka Izumi,
Orofeo Carlo M.,
Tsuji Masaharu,
Ikeda Kenichi
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200902405
Subject(s) - graphene , materials science , substrate (aquarium) , epitaxy , raman spectroscopy , graphene nanoribbons , graphene oxide paper , sputtering , nanotechnology , thin film , optoelectronics , layer (electronics) , optics , oceanography , physics , geology
Rectangle‐ and triangle‐shaped microscale graphene films are grown on epitaxial Co films deposited on single‐crystal MgO substrates with (001) and (111) planes, respectively. A thin film of Co or Ni metal is epitaxially deposited on a MgO substrate by sputtering while heating the substrate. Thermal decomposition of polystyrene over this epitaxial metal film in vacuum gives rectangular or triangular pit structures whose orientation and shape are strongly dependent on the crystallographic orientation of the MgO substrate. Raman mapping measurements indicate preferential formation of few‐layer graphene films inside these pits. The rectangular graphene films are transferred onto a SiO 2 /Si substrate while maintaining the original shape and field‐effect transistors are fabricated using the transferred films. These findings on the formation of rectangular/triangular graphene give new insights on the formation mechanism of graphene and can be applied for more advanced/controlled graphene growth.