Premium
Measurement of Local Si‐Nanowire Growth Kinetics Using In situ Transmission Electron Microscopy of Heated Cantilevers
Author(s) -
Kallesøe Christian,
Wen ChengYen,
Mølhave Kristian,
Bøggild Peter,
Ross Frances M.
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200902187
Subject(s) - nanowire , cantilever , nucleation , materials science , transmission electron microscopy , nanotechnology , in situ , silicon , characterization (materials science) , electron microscope , scanning electron microscope , optoelectronics , composite material , optics , chemistry , physics , organic chemistry
Abstract A technique to study nanowire growth processes on locally heated microcantilevers in situ in a transmission electron microscope has been developed. The in situ observations allow the characterization of the nucleation process of silicon wires, as well as the measurement of growth rates of individual nanowires and the ability to observe the formation of nanowire bridges between separate cantilevers to form a complete nanowire device. How well the nanowires can be nucleated controllably on typical cantilever sidewalls is examined, and the measurements of nanowire growth rates are used to calibrate the cantilever‐heater parameters used in finite‐element models of cantilever heating profiles, useful for optimization of the design of devices requiring local growth.