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Low‐Frequency Raman Scattering from Nanocrystals Caused by Coherent Excitation of Phonons
Author(s) -
Wu X. L.,
Xiong S. J.,
Sun L. T.,
Shen J. C.,
Chu P. K.
Publication year - 2009
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200901579
Subject(s) - raman scattering , excitation , phonon , raman spectroscopy , nanocrystal , materials science , scattering , x ray raman scattering , coherent anti stokes raman spectroscopy , molecular physics , optoelectronics , condensed matter physics , nanotechnology , optics , physics , quantum mechanics
Ultrahigh‐resolution transmission electron microscopy clearly reveals the absence of a disordered or softer interface layer between Ge x Si 1– x nanocrystals (NCs) and the SiO 2 matrix. A theory shows that the collective modes comprising coherent excitation of phonons in a large number of NCs contribute to the Raman scattering. This work provides a new understanding of low‐frequency Raman scattering from NC‐embedded matrices.
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