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Probing Layer Number and Stacking Order of Few‐Layer Graphene by Raman Spectroscopy
Author(s) -
Hao Yufeng,
Wang Yingying,
Wang Lei,
Ni Zhenhua,
Wang Ziqian,
Wang Rui,
Koo Chee Keong,
Shen Zexiang,
Thong John T. L.
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200901173
Subject(s) - graphene , stacking , raman spectroscopy , materials science , layer (electronics) , nanotechnology , optoelectronics , optics , nuclear magnetic resonance , physics
Layer number and stacking order of few‐layer graphene (FLG) are of particular interest since they directly determine the performance of graphene‐based electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of AB ‐stacked FLG from single‐ to five‐layer graphene; a few key spectral characteristics are also identified for FLG with misoriented stacking.