Premium
Optimized Structural Designs for Stretchable Silicon Integrated Circuits
Author(s) -
Kim DaeHyeong,
Liu Zhuangjian,
Kim YunSoung,
Wu Jian,
Song Jizhou,
Kim HoonSik,
Huang Yonggang,
Hwang Kehchih,
Zhang Yongwei,
Rogers John A.
Publication year - 2009
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200900853
Subject(s) - electronic circuit , wafer , materials science , electronics , silicon , integrated circuit , semiconductor , amplifier , electronic engineering , nanotechnology , computer science , cmos , electrical engineering , optoelectronics , engineering
Abstract Materials and design strategies for stretchable silicon integrated circuits that use non‐coplanar mesh layouts and elastomeric substrates are presented. Detailed experimental and theoretical studies reveal many of the key underlying aspects of these systems. The results shpw, as an example, optimized mechanics and materials for circuits that exhibit maximum principal strains less than 0.2% even for applied strains of up to ≈90%. Simple circuits, including complementary metal–oxide–semiconductor inverters and n‐type metal–oxide–semiconductor differential amplifiers, validate these designs. The results suggest practical routes to high‐performance electronics with linear elastic responses to large strain deformations, suitable for diverse applications that are not readily addressed with conventional wafer‐based technologies.