Premium
Photoelectrical Response in Single‐Layer Graphene Transistors
Author(s) -
Shi Yumeng,
Fang Wenjing,
Zhang Keke,
Zhang Wenjing,
Li LainJong
Publication year - 2009
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200900294
Subject(s) - materials science , optoelectronics , transistor , photocurrent , graphene , active layer , hysteresis , layer (electronics) , photoconductivity , thin film transistor , nanotechnology , voltage , physics , quantum mechanics
The illumination of single‐layer graphene (SLG) transistors with visible light causes a negative shift in their transfer curves, attributable to the desorption of oxygen. However, their hysteresis is not affected by illumination, which suggests that charge traps are not affected by the visible‐light exposure. When SLG transistors are covered with a layer of photoactive polymer, the photodesorption‐induced current change in the transistors becomes less significant than the effects caused by the surrounding photoactive polymer. These observations demonstrate that the photoelectrical response of SLG transistors is dominated by extrinsic mechanisms rather than by the direct photocurrent process. The results suggest a new strategy for achieving light detection. The large cross section of SLG films for receiving photons and the capability of tailoring photoelectrical properties on them is potentially useful for optoelectronic applications.