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Facile Synthesis and Size Control of II–VI Nanowires Using Bismuth Salts
Author(s) -
Puthussery James,
Kosel Thomas H.,
Kuno Masaru
Publication year - 2009
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200801838
Subject(s) - bismuth , nanowire , materials science , semiconductor , absorption edge , enhanced data rates for gsm evolution , absorption (acoustics) , nanotechnology , chemical engineering , optoelectronics , band gap , composite material , metallurgy , telecommunications , computer science , engineering
High‐aspect‐ratio II–VI semiconductor nanowires (NWs; see image) are prepared using solution–liquid–solid growth employing simple Bi salts. NW size control is achieved by varying the Bi content of the preparation, leading to wire diameters between 5 and 11 nm. Corresponding size‐dependent trends are seen in the linear absorption/band‐edge emission of the wires, suggesting carrier confinement.