Facile Synthesis and Size Control of II–VI Nanowires Using Bismuth Salts | Zendy

Puthussery James | Zendy; Kosel Thomas H. | Zendy; Kuno Masaru | Zendy

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Facile Synthesis and Size Control of II–VI Nanowires Using Bismuth Salts

Author(s) -

Puthussery James,

Kosel Thomas H.,

Kuno Masaru

Publication year - 2009

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.200801838

Subject(s) - bismuth , nanowire , materials science , semiconductor , absorption edge , enhanced data rates for gsm evolution , absorption (acoustics) , nanotechnology , chemical engineering , optoelectronics , band gap , composite material , metallurgy , telecommunications , computer science , engineering

High‐aspect‐ratio II–VI semiconductor nanowires (NWs; see image) are prepared using solution–liquid–solid growth employing simple Bi salts. NW size control is achieved by varying the Bi content of the preparation, leading to wire diameters between 5 and 11 nm. Corresponding size‐dependent trends are seen in the linear absorption/band‐edge emission of the wires, suggesting carrier confinement.

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