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Tuning Electrical and Photoelectrical Properties of CdSe Nanowires via Indium Doping
Author(s) -
He Zhubing,
Jie Jiansheng,
Zhang Wenjun,
Zhang Wenfeng,
Luo Linbao,
Fan Xia,
Yuan Guodong,
Bello Igor,
Lee ShuitTong
Publication year - 2009
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200801006
Subject(s) - indium , nanowire , doping , materials science , optoelectronics , diffusion , nanotechnology , conductivity , chemistry , physics , thermodynamics
n‐Type doping of CdSe nanowires is achieved by either co‐evaporating indium at different temperatures during growth, or post‐growth doping via a thermal diffusion process. The conductivity of CdSe nanowires is tuned reproducibly by nearly five orders of magnitude in a controlled way, and carrier concentration as high as ∼10 19 cm −3 is reached (see image). The doped CdSe nanowires show high sensitivity to light irradiation.