Premium
Transport Coefficients of InAs Nanowires as a Function of Diameter
Author(s) -
Dayeh Shadi A.,
Yu Edward T.,
Wang Deli
Publication year - 2009
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200800969
Subject(s) - nanowire , electron transport chain , materials science , electron , condensed matter physics , voltage , layer (electronics) , solver , gate voltage , function (biology) , nanotechnology , optoelectronics , physics , chemistry , quantum mechanics , mathematics , transistor , evolutionary biology , biology , mathematical optimization , biochemistry
Wire transport : The diameter‐dependent transport coefficients in InAs nanowires (see picture) are studied at equal vertical and lateral fields and at equal gate–source voltage (V GS ) sweep rates. Simulations with a one‐dimensional Schrödinger–Poisson solver support the presence of an electron accumulation layer near the positive interface‐state charges that lead to the observed trends.