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Evolution of Epitaxial InAs Nanowires on GaAs (111)B
Author(s) -
Zhang Xin,
Zou Jin,
Paladugu Mohanchand,
Guo Yanan,
Wang Yong,
Kim Yong,
Joyce Hannah J.,
Gao Qiang,
Tan H. Hoe,
Jagadish Chennupati
Publication year - 2009
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200800690
Subject(s) - nanowire , epitaxy , materials science , substrate (aquarium) , chemical vapor deposition , deposition (geology) , nanotechnology , optoelectronics , chemical engineering , crystallography , layer (electronics) , chemistry , paleontology , oceanography , sediment , engineering , biology , geology
The evolution of InAs nanowires on the GaAs (111)B substrate by metal–organic chemical vapor deposition shows that InAs traces are formed and elongated first, driven by the liquid Au catalysts preferentially retaining interfaces with the GaAs substrate due to the Au/GaAs interfacial energy being lower than that of Au/InAs. Vertical InAs nanowires initiate when elongated traces intersect (see image).