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Doping‐Free Nanoscale Complementary Carbon‐Nanotube Field‐Effect Transistors with DNA‐Templated Molecular Lithography
Author(s) -
Kim KukHwan,
Kim JuHyun,
Huang XingJiu,
Yoo Seung Min,
Lee Sang Yup,
Choi YangKyu
Publication year - 2008
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200800226
Subject(s) - materials science , nanotechnology , carbon nanotube , lithography , field effect transistor , nanoscopic scale , doping , fabrication , transistor , carbon nanotube field effect transistor , nanolithography , optoelectronics , electrical engineering , medicine , alternative medicine , pathology , voltage , engineering
A comprehensive methodology that enables cost‐effective and reproducible fabrication for doping‐free complementary carbon‐nanotube field‐effect transistors with molecular‐scale nanogaps is presented (see image). Incorporating top‐down/bottom‐up dualities, numerous SWNTs are localized at a predefined active region and interconnected via a DNA‐templated nanogap.