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Synthesis of a Highly Ordered Single‐Crystalline Bi 2 S 3 Nanowire Array and its Metal/Semiconductor/Metal Back‐to‐Back Schottky Diode
Author(s) -
Bao Haifeng,
Li Chang Ming,
Cui Xiaoqiang,
Gan Ye,
Song Qunliang,
Guo Jun
Publication year - 2008
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200800007
Subject(s) - materials science , nanowire , schottky diode , tungsten , substrate (aquarium) , metal , semiconductor , optoelectronics , diode , electrode , schottky barrier , nanotechnology , metallurgy , chemistry , oceanography , geology
An array of Bi 2 S 3 nanowires on tungsten foil (see image), in which the long axis of the wires is perpendicular to the W substrate, is prepared by a hydrothermal process without the aid of template or catalyst. The semiconducting Bi 2 S 3 nanowires on the metallic tungsten substrate are covered with a metal electrode to form a metal/semiconductor/metal sandwich, which yields a back‐to‐back Schottky diode.