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Embedded Nanofibers Induced by High‐Energy Ion Irradiation of Bulk GaSb
Author(s) -
PerezBergquist Alejandro,
Zhu Sha,
Sun Kai,
Xiang Xia,
Zhang Yanwen,
Wang Lumin
Publication year - 2008
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200701236
Subject(s) - nanofiber , materials science , irradiation , ion , layer (electronics) , fiber , surface energy , nanotechnology , optoelectronics , composite material , chemistry , physics , organic chemistry , nuclear physics
Embedded GaSb nanofibers with an intact surface layer are formed by high‐energy ion irradiation of bulk single‐crystal GaSb (see image). Distinct regimes are present within the fiber layer and the effects of varying implant parameters on the fiber regimes are reported. A growth model for nanofibers is presented, as well as a model for the dose‐dependant removal of the surface cover.