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On‐Chip Fabrication of Well‐Aligned and Contact‐Barrier‐Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity
Author(s) -
Chen ReuiSan,
Wang ShiaoWen,
Lan ZonHuang,
Tsai Jeff TsungHui,
Wu ChienTing,
Chen LiChyong,
Chen KueiHsien,
Huang YingSheng,
Chen ChiaChun
Publication year - 2008
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200701184
Subject(s) - responsivity , photocurrent , materials science , photoconductivity , nanowire , optoelectronics , fabrication , nanotechnology , gallium nitride , photodetector , layer (electronics) , alternative medicine , pathology , medicine
Building nanobridges : Direct integration of an ensemble of GaN nanowires (n) onto a microchip produces a viable nanobridge (NB) device with good alignment and contact performance, the design of which demonstrates the potential of nanowires for sensor development. These GaN NBs have strong surface‐enhanced photoconductivity with ultrahigh responsivity (see graph).