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Prismatic Quantum Heterostructures Synthesized on Molecular‐Beam Epitaxy GaAs Nanowires
Author(s) -
Fontcuberta i Morral Anna,
Spirkoska Danče,
Arbiol Jordi,
Heigoldt Matthias,
Morante Joan Ramon,
Abstreiter Gerhard
Publication year - 2008
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200701091
Subject(s) - nanowire , molecular beam epitaxy , nucleation , heterojunction , materials science , nanotechnology , deposition (geology) , nanometre , optoelectronics , epitaxy , chemical beam epitaxy , chemistry , composite material , layer (electronics) , paleontology , organic chemistry , sediment , biology
GaAs nanowires are synthesized by molecular‐beam epitaxy (MBE) without using gold as a nucleation seed. The synthesis can be tuned from 1D to 2D by changing the MBE growth conditions. This allows the deposition of quasi 1D quantum wells on the nanometer‐wide facets of the nanowires, resulting in a prismatic geometry (see image).