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Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires
Author(s) -
Stoica Toma,
Sutter Eli,
Meijers Ralph J.,
Debnath Ratan K.,
Calarco Raffaella,
Lüth Hans,
Grützmacher Detlev
Publication year - 2008
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200700936
Subject(s) - nanowire , materials science , nucleation , amorphous solid , wetting layer , wetting , layer (electronics) , transmission electron microscopy , nanotechnology , vapor–liquid–solid method , high resolution transmission electron microscopy , oxide , chemical engineering , crystallography , composite material , chemistry , metallurgy , organic chemistry , engineering
Nanowire growth : Catalyst‐free growth of GaN nanowires on Si substrates (see image) is investigated by high‐resolution transmission electron microscopy. Small GaN crystalline clusters are found on top of an interface amorphous layer. High‐crystalline‐quality vertical nanowires are grown on an amorphous oxide layer. These findings open new possibilities for nanowire growth on a variety of nonconventional substrates.