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Visualization of Carrier Depletion in Semiconducting Nanowires
Author(s) -
Hayden Oliver,
Zheng Gengfeng,
Agarwal Prabhat,
Lieber Charles M.
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200700600
Subject(s) - nanowire , depletion region , heterojunction , materials science , visualization , charge carrier , optoelectronics , space charge , nanotechnology , chemical physics , semiconductor , physics , computer science , data mining , quantum mechanics , electron
The visualization of the space–charge region in nanowire pn junctions (see image) is presented by far‐field optical microscopy. This general approach is a powerful tool for estimates of the carrier distributions and device capacitances. For the case of an n‐CdS/p + ‐Si heterojunction we show that the carrier depletion widths in nanowires deviate from the traditional square‐root dependence purely due to electrostatic effects.