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Ambient AFM Nanoscale Oxidation of Hydrogen‐Passivated Silicon with Conductive‐Diamond‐Coated Probes
Author(s) -
Schmitz Matthew J.,
Kinser C. Reagan,
Cortes Norma E.,
Hersam Mark C.
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200700414
Subject(s) - materials science , nanoscopic scale , diamond , silicon , nanotechnology , electrical conductor , doping , hydrogen , conductive atomic force microscopy , optoelectronics , atomic force microscopy , composite material , chemistry , organic chemistry
Tip top : Wear resistant, conductive boron‐doped diamond‐coated AFM tips enable reliable nanoscale oxidation of hydrogen‐terminated silicon with sub‐20‐nm spatial resolution (see image) and nanopatterning threshold biases as low as 1 V. Despite relatively high currents during nanopatterning, the kinetics are quantitatively consistent with an electric‐field‐induced mechanism.