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A Chemically Amplified Fullerene‐Derivative Molecular Electron‐Beam Resist
Author(s) -
Gibbons Francis,
Zaid Hasnah M.,
Manickam Mayandithevar,
Preece Jon A.,
Palmer Richard E.,
Robinson Alex P. G.
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200700324
Subject(s) - resist , materials science , fullerene , electron beam lithography , epoxy , lithography , derivative (finance) , nanotechnology , optoelectronics , composite material , chemistry , organic chemistry , layer (electronics) , financial economics , economics
Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line‐width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20‐nm line widths are patterned.