Preferential Orientation of a Chiral Semiconducting Carbon Nanotube on the Locally Depassivated Si(100)‐2×1:H Surface Identified by Scanning Tunneling Microscopy | Zendy

Albrecht Peter M. | Zendy; BarrazaLopez Salvador | Zendy; Lyding Joseph W. | Zendy

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Preferential Orientation of a Chiral Semiconducting Carbon Nanotube on the Locally Depassivated Si(100)‐2×1:H Surface Identified by Scanning Tunneling Microscopy

Author(s) -

Albrecht Peter M.,

BarrazaLopez Salvador,

Lyding Joseph W.

Publication year - 2007

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.200700070

Subject(s) - scanning tunneling microscope , materials science , carbon nanotube , nanotechnology , silicon , scanning tunneling spectroscopy , nanotube , optoelectronics , electrochemical scanning tunneling microscope , quantum tunnelling

Patterns can promote the locally enhanced binding of a semiconducting single‐walled carbon nanotube (SWNT) in a preferential alignment on the Si(100) platform. The figure shows a three‐dimensional rendering of a 30 nm×30 nm image of a SWNT traversing a 4‐nm‐wide stripe of atomically clean silicon lithographically patterned on the Si(100)‐2×1:H surface using an ultrahigh‐vacuum scanning tunneling microscope.

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