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Purification of Semiconducting Carbon Nanotubes
Author(s) -
Yuan Dongning,
Liu Jie
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200600705
Subject(s) - carbon nanotube , materials science , nanotechnology , wafer , electronics , etching (microfabrication) , carbon fibers , metal , yield (engineering) , composite material , metallurgy , composite number , chemistry , layer (electronics)
In general , all preparation methods for single‐walled carbon nanotubes (CNTs) yield a mixture of semiconducting and metallic CNTs, which differ in their structure and electronic properties, a serious drawback for their practical use in electronic devices. Recently, a technique for obtaining pure semiconducting CNTs (see schematic) was reported – selective etching of the metallic CNTs in methane plasma. This method can be applied to wafer‐scale treatment of CNT films and is an important advance for CNT electronics.