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Nitrogen‐Doped Tungsten Oxide Nanowires: Low‐Temperature Synthesis on Si, and Electrical, Optical, and Field‐Emission Properties
Author(s) -
Chang MuTung,
Chou LiJen,
Chueh YuLun,
Lee YuChen,
Hsieh ChinHua,
Chen ChiiDong,
Lan YannWen,
Chen LihJuann
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200600562
Subject(s) - materials science , nanowire , tungsten , photoluminescence , field electron emission , doping , wafer , nanotechnology , fabrication , oxide , vapor–liquid–solid method , nitrogen , optoelectronics , metallurgy , chemistry , pathology , medicine , physics , alternative medicine , organic chemistry , quantum mechanics , electron
Very dense and uniformly distributed nitrogen‐doped tungsten oxide (WO 3 ) nanowires were synthesized successfully on a 4‐inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 μm and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor–solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen‐doped WO 3 nanowires on Si in large quantities. The direct fabrication of WO 3 ‐based nanodevices on Si has been demonstrated.