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Regular Dislocation Networks in Silicon as a Tool for Nanostructure Devices used in Optics, Biology, and Electronics
Author(s) -
Kittler M.,
Yu X.,
Mchedlidze T.,
Arguirov T.,
Vyvenko O. F.,
Seifert W.,
Reiche M.,
Wilhelm T.,
Seibt M.,
Voß O.,
Wolff A.,
Fritzsche W.
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200600539
Subject(s) - materials science , wafer , nanostructure , fabrication , nanotechnology , dislocation , silicon , electronics , optoelectronics , common emitter , electrical conductor , electrical engineering , medicine , alternative medicine , engineering , pathology , composite material
Well‐controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation‐network‐based light emitters, manipulators of biomolecules, gettering and insulating layers, and three‐dimensional buried conductive channels are presented and discussed. A prototype of a Si‐based light emitter working at a wavelength of about 1.5 μm with an efficiency potential estimated at 1 % is demonstrated.