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Growth Mechanism of Truncated Triangular III–V Nanowires
Author(s) -
Zou Jin,
Paladugu Mohanchand,
Wang Hui,
Auchterlonie Graeme J.,
Guo YaNan,
Kim Yong,
Gao Qiang,
Joyce Hannah J.,
Tan H. Hoe,
Jagadish Chennupati
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200600503
Subject(s) - nanowire , materials science , mechanism (biology) , nanotechnology , base (topology) , crystallography , chemistry , physics , mathematics , quantum mechanics , mathematical analysis
What's in a wire? To determine the fundamental reason for obtaining tapered nanowires, GaAs nanowires were grown on {111}B GaAs substrates. Their novel structural characteristics (e.g., a truncated triangular cross section at the base of the nanowires; see image) were carefully investigated using high‐resolution SEM and various TEM techniques. Based on the obtained structural characteristics of these nanowires and the growth environment, an asymmetrical lateral‐growth mechanism has been identified.