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High‐Throughput Dip‐Pen‐Nanolithography‐Based Fabrication of Si Nanostructures
Author(s) -
Zhang Hua,
Amro Nabil A.,
Disawal Sandeep,
Elghanian Robert,
Shile Roger,
Fragala Joseph
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200600393
Subject(s) - nanolithography , nanostructure , fabrication , dip pen nanolithography , materials science , nanotechnology , etching (microfabrication) , reactive ion etching , lithography , throughput , silicon , nanosphere lithography , isotropic etching , optoelectronics , layer (electronics) , computer science , medicine , telecommunications , alternative medicine , pathology , wireless
Si nanostructures : A new method for fabricating large‐area Si nanostructures in a high‐throughput fashion has been demonstrated. The procedure is based upon dip‐pen nanolithography in combination with wet‐chemical etching and reactive ion etching. Multipen techniques have been demonstrated for the fabrication of large‐area Si nanostructure arrays (see AFM image; dot 1: diameter/height=1460/140 nm; dot 9: diameter/height=385/75 nm).