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Sub‐5‐nm Gaps Prepared by On‐Wire Lithography: Correlating Gap Size with Electrical Transport
Author(s) -
Qin Lidong,
Jang JaeWon,
Huang Ling,
Mirkin Chad A.
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200600386
Subject(s) - electron beam lithography , lithography , nanotechnology , materials science , photolithography , nanowire , next generation lithography , resist , molecular electronics , stencil lithography , fabrication , nanolithography , optoelectronics , chemistry , molecule , medicine , alternative medicine , organic chemistry , layer (electronics) , pathology
OWL – a wise choice : On‐wire lithography (OWL) has been used to fabricate 2.5‐nm gaps in high yield in Au nanowires. Current–voltage measurements of the gaps show tunneling transport behavior and calculated gap sizes that match those determined by electron microscopy (see figure). Such gaps prepared by OWL can be utilized to make measurements on nanomaterials, and even on single molecules.