Metal‐Induced Gap States at a Carbon‐Nanotube Intramolecular Heterojunction Observed by Scanning Tunneling Microscopy | Zendy

Ruppalt Laura B. | Zendy; Lyding Joseph W. | Zendy

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Metal‐Induced Gap States at a Carbon‐Nanotube Intramolecular Heterojunction Observed by Scanning Tunneling Microscopy

Author(s) -

Ruppalt Laura B.,

Lyding Joseph W.

Publication year - 2007

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.200600343

Subject(s) - scanning tunneling microscope , heterojunction , carbon nanotube , materials science , nanotechnology , scanning tunneling spectroscopy , nanoscopic scale , semiconductor , nanotube , quantum tunnelling , carbon nanotube quantum dot , metal , scanning gate microscopy , characterization (materials science) , optoelectronics , scanning electron microscope , scanning capacitance microscopy , scanning confocal electron microscopy , composite material , metallurgy

Naturally occurring carbon‐nanotube heterojunctions provide a unique opportunity for studying nearly one‐dimensional metal–semiconductor (M–S) interfaces. Coupling the nanoscale lateral precision of the ultrahigh‐vacuum STM with spatially‐resolved electronic measurements enables detailed characterization of a single‐walled carbon nanotube M–S junction (see figure) and of the metal‐induced gap states present at the interface.

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