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Temperature‐Dependent Growth Direction of Ultrathin ZnSe Nanowires
Author(s) -
Cai Yuan,
Chan Siu Keung,
Sou Iam Keong,
Chan Yu Fai,
Su Dang Sheng,
Wang Ning
Publication year - 2007
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200600266
Subject(s) - nanowire , materials science , molecular beam epitaxy , optoelectronics , vapor–liquid–solid method , epitaxy , nanotechnology , layer (electronics)
ZnSe nanowires (NWs) are grown on GaAs substrates via vapor–solid–liquid molecular beam epitaxy. TEM studies show that ZnSe NWs with diameters of about 10 nm, grown at a high temperature, favor the <110> direction (see image), whereas those grown at a low temperature favor the <111> direction; NW diameter also affects the growth direction.