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Top‐Down Fabrication of Semiconductor Nanowires with Alternating Structures along their Longitudinal and Transverse Axes
Author(s) -
Sun Yugang,
Graff Rachel A.,
Strano Michael S.,
Rogers John A.
Publication year - 2005
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200500094
Subject(s) - nanowire , fabrication , transverse plane , etching (microfabrication) , anisotropy , semiconductor , materials science , nanotechnology , electron beam lithography , photonics , evaporation , nanoscopic scale , optoelectronics , optics , physics , resist , engineering , pathology , thermodynamics , medicine , alternative medicine , structural engineering , layer (electronics)
The combined use of “top‐down” photolithographic techniques and anisotropic etching or electron‐beam evaporation provides a versatile approach to fabricate nanowires of III–V semiconductors (e.g., GaAs) with alternating structures along their longitudinal and transverse axes (see Figure). This method can be easily scaled up to produce nanowires in large‐scale quantities, and the resultant nanowires have unique optical properties and potential photonic applications.