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Crystallography and Surface Faceting of Germanium Nanowires
Author(s) -
Hanrath Tobias,
Korgel Brian A.
Publication year - 2005
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200500033
Subject(s) - faceting , nanowire , germanium , materials science , transmission electron microscopy , crystallography , electron diffraction , diffraction , electron microscope , nanotechnology , high resolution transmission electron microscopy , condensed matter physics , chemical physics , silicon , optics , optoelectronics , chemistry , physics
Key crystallographic aspects of Ge nanowires grown in a supercritical fluid were investigated by high‐resolution transmission electron microscopy. The favored <110> growth direction was attributed to the crystallographic faceting of low‐energy {111} and {100} planes on the initial nucleus crystal and the exposed nanowire sidewall surfaces. Electron diffraction patterns of individual nanowires exhibited forbidden 1/3 {422} reflections due to incomplete {111} surface facets and the finite size of the nanowires.