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Unconventional Gallium Oxide Nanowires
Author(s) -
Zhan Jinhua,
Bando Yoshio,
Hu Junqing,
Xu Fangfang,
Golberg Dmitri
Publication year - 2005
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200500022
Subject(s) - zigzag , nanowire , nanostructure , materials science , gallium , gallium nitride , nanotechnology , stacking , oxide , crystallography , chemistry , geometry , nuclear magnetic resonance , metallurgy , physics , mathematics , layer (electronics)
Zigzag and helical β‐Ga 2 O 3 one‐dimensional nanostructures were produced by thermal evaporation of gallium oxide in the presence of gallium nitride. High‐resolution TEM analysis indicates that each individual zigzag nanostructure has a periodic arrangement of three distinct blocks: two structurally perfect blocks mirrored with respect to each other on the (002) plane, and one stacking‐fault‐rich block sandwiched between them. In a zigzag nanostructure, the growth orientation of a β‐Ga 2 O 3 crystal changes alternately in three blocks. The zigzag nanostructure as a whole has the [001] axial direction. In addition to zigzag nanostructures, single‐crystalline helical nanowires were also obtained.