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Temperature‐Dependent Growth of Germanium Oxide and Silicon Oxide Based Nanostructures, Aligned Silicon Oxide Nanowire Assemblies, and Silicon Oxide Microtubes
Author(s) -
Hu Junqing,
Jiang Yang,
Meng Xiangmin,
Lee ChunSing,
Lee ShuitTong
Publication year - 2005
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.200400101
Subject(s) - materials science , silicon , oxide , silicon oxide , nanostructure , nanowire , germanium , nanotechnology , oxide thin film transistor , silicon nanowires , germanium oxide , locos , chemical engineering , optoelectronics , monocrystalline silicon , metallurgy , thin film transistor , layer (electronics) , silicon nitride , engineering
We demonstrate the temperature‐dependent growth of germanium oxide and silicon oxide based composite nanostructures (multiple nanojunctions of Ge nanowires and SiO x nanowires, Ge‐filled SiO 2 nanotubes, Ge/SiO 2 coaxial nanocables, and a variety of interesting micrometer‐sized structures), aligned SiO x nanowire assemblies, and SiO x microtubes. The structures were characterized by SEM, TEM, energy‐dispersive X‐ray spectroscopy, and electron diffraction. The combination of laser ablation of a germanium target and thermal evaoporation of silicon monoxide powders resulted in the formation of Ge and SiO x species in a carrier gas; the nano/micro‐sized structures grow by either a Ge‐catalyzed vapor–liquid–solid or a Ge‐nanowire‐templated vapor–solid process.