z-logo
Premium
Density Functional Theory Study of Ultrashort Metal−Metal Distances in Diberyllium Complexes Bearing Carbene Ligands
Author(s) -
Sun Lili
Publication year - 2021
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.202102117
Subject(s) - carbene , density functional theory , chemistry , homo/lumo , covalent bond , mesoionic , metal , crystallography , natural bond orbital , non covalent interactions , atom (system on chip) , molecular orbital , antibonding molecular orbital , computational chemistry , atomic orbital , electron , molecule , hydrogen bond , physics , organic chemistry , quantum mechanics , computer science , embedded system , catalysis
Diberyllium complexes with ultrashort metal−metal distances (USMMDs, defined as d M−M <1.900 Å) are fascinating for the nature of the valence electronic structure of Be atoms. In this paper a family of diberyllium complexes [L−BeH 3 Be−L] + ( 1 – 7 ), in which L was an N ‐heterocyclic carbene (NHC) or a mesoionic carbene (MIC), were studied by Density Functional Theory (DFT) at the B3LYP/cc‐pVTZ level. It was found that complexes 1 – 7 possessed ultrashort Be−Be distances of 1.754 Å–1.779 Å and strong covalent bonds between a Be atom and its adjacent carbene center (C carb ) at once. Electronic structures and chemical bonding analyses ascribed USMMDs between the Be atoms to the Be−H−Be three‐center two‐electron (3c‐2e) bonds. The strong Be−C carb bonds were determined by combining effects of covalent interaction and electrostatic interaction between the Be and the C carb atoms. These complexes exhibited a great stability with large highest occupied molecular orbital‐lowest unoccupied molecular orbital (HOMO‐LUMO) gaps, high vertical detachment energies (VDEs) and low vertical electron affinities (VEAs) and are potential targets in future experiments.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here