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Research on Multi‐morphology Evolution of MoS 2 in Chemical Vapor Deposition
Author(s) -
Zang Lingyu,
Chen Long,
Tan Dongchen,
Cao Xuguang,
Sun Nan,
Jiang Chengming
Publication year - 2021
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.202101843
Subject(s) - morphology (biology) , chemical vapor deposition , materials science , layer (electronics) , substrate (aquarium) , nanotechnology , chemical engineering , deposition (geology) , geology , engineering , paleontology , oceanography , sediment
Due to the special structure and excellent performance, the two‐dimensional mono‐layer MoS 2 has received extensive attention in recent years. However, due to technical limitations, the morphology of the synthesized MoS 2 is unstable. In the CVD process, at least four morphologies of MoS 2 are grown on a piece of SiO 2 /Si substrate. Here, we discuss the reasons for the formation of different MoS 2 morphologies via the experiments and the M‐CV model. Then a possible morphology evolution mechanism is proposed. Research on the relationship among the flow rate, concentration and morphology shows that in the middle of the substrate, CVD is more stable and can produce high‐quality mono‐layer MoS 2 films. It provides mechanism guidance for improving the stability of CVD and generating the large‐size mono‐layer MoS 2 films.