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Study on Microstructure and Photocatalytic Mechanism of g‐C 3 N 4 /WO 3 Heterojunctions Prepared by Ice Template
Author(s) -
Zhang Ke,
Jin Yaran,
Guo Yongxiang,
Wang Haiwang,
Liu Kefan,
Fu Weijie,
Zhang Jinrui,
Pan Haijun,
Wang Bingzhu
Publication year - 2021
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.202101168
Subject(s) - photocatalysis , heterojunction , rhodamine b , microstructure , materials science , semiconductor , specific surface area , hydrogen , degradation (telecommunications) , electron paramagnetic resonance , analytical chemistry (journal) , chemical engineering , catalysis , composite material , chemistry , optoelectronics , physics , organic chemistry , nuclear magnetic resonance , engineering , telecommunications , computer science
For semiconductor photocatalyst, such as g‐C 3 N 4 /WO 3 , heterojunction contact area and specific surface area are the main reasons that limit their photocatalytic activity. Simultaneously, the photogenerated electron‐hole transport mechanism of g‐C 3 N 4 /WO 3 is still controversial. In this article, g‐C 3 N 4 /WO 3 semiconductor photocatalysts were synthesized by ice template method. XRD, SEM, BET, etc. were used to characterize the microstructure and morphology of g‐C 3 N 4 /WO 3 with different quality scores of WO 3 , and it was found that the specific surface area of 10 wt% g‐C 3 N 4 /WO 3 reached 54.8 m 2 /g, which was 1.92 times that of g‐C 3 N 4 . The photocatalytic performance of semiconductor photocatalysts was measured by photolysis of aquatic hydrogen and degradation of RhB solution. The results show that the cumulative hydrogen production of 10 wt% g‐C 3 N 4 /WO 3 is 780.11 μmol/g, which is 27.5 % higher than that of g‐C 3 N 4 . Simultaneously, the degradation rate of the g‐C 3 N 4 /WO 3 composite material to Rhodamine B solution is 4.27 times that of g‐C 3 N 4 . The mechanism of electron hole separation was obtained by EPR, and it is proved that g‐C 3 N 4 /WO 3 composite material constructs Z‐type heterojunction.