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Novel Hyperbranched Polyimides Bearing Bis(trifluoromethyl)‐triphenylamine Moiety: Preparation and Rewritable Nonvolatile Memory Behaviours
Author(s) -
Song Ying,
Zhao Liqun,
Yao Hongyan,
Tian Ye,
Zhu Shiyang,
Guan Shaowei
Publication year - 2021
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.202003923
Subject(s) - triphenylamine , moiety , materials science , trifluoromethyl , thermal stability , monomer , polymer , polymer chemistry , polymerization , dendrimer , organic chemistry , chemistry , composite material , alkyl
Two novel hyperbranched polyimides (HBPIs) bearing bis(trifluoromethyl)‐triphenylamine moiety were prepared by condensation polymerization of a triamine monomer, N,N‐bis[4‐amino‐2‐(trifluoromethyl)phenyl]‐1,4‐benzenediamine (ATPB), with oxydiphthalic dianhydride (ODPA) and hexafluoroisopropyl phthalic anhydride (6FDA). The trifluoromethyl group was introduced into HBPIs to improve the property of the memory device. The resulting hyperbranched polyimides exhibited high molecular weights (weight‐average molecular weights large to 7.51×10 4 with a polydispersity of 1.63), outstanding organic‐solubility and excellent thermal stability (5 % thermal weight‐loss temperature up to 518 °C). Memory devices based on these hyperbranched polyimides showed similar rewritable nonvolatile memory characteristics but with different threshold voltages. The switching voltage was found to have a dependence on the energy barrier between polymer active layer and electrodes. These devices displayed favorable stability in both OFF and ON states with retention time long to 10 4 s and ON/OFF current ratio as high as 10 6 . The space charge‐limited conduction model and local filaments formation were responsible for the switching behaviors of these memory devices. The results indicate that these hyperbranched polyimides are promising candidates for polymer memory application.