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Thin Chemisorbed Polyaniline Film on Cobalt Oxide as an Electrode for Hybrid Energy Storage Devices
Author(s) -
Izwan Mis Izan,
Krishnan Syam G.,
Jose Rajan
Publication year - 2020
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.202001879
Subject(s) - supercapacitor , materials science , polyaniline , electrode , cobalt oxide , electrolyte , energy storage , electrochemistry , chemical engineering , mesoporous material , battery (electricity) , oxide , nanotechnology , polymer , composite material , chemistry , organic chemistry , physics , catalysis , quantum mechanics , engineering , metallurgy , polymerization , power (physics)
Electrical charge storing electrodes and their surface modification are intensively investigated to improve the charge storability indicators in electrochemical energy storage devices. Here, the effects of a thin chemisorbed polyaniline (PANI) film on the charge storage behavior of rod‐shaped spinal‐type cobalt oxide (Co 3 O 4 ) nanorods (PANI@Co 3 O 4 ) are detailed for fabrication of battery–supercapacitor hybrid (BSH) devices. The PANI@Co 3 O 4 showed larger surface area and optimum porosity properties, which contributed to ∼50 % enhanced specific charge than that in the Co 3 O 4 . The deconvoluted total charge storage gain showed more contribution to the bulk‐diffusion controlled process (battery‐type), lower ion transport resistance and Warburg impedance in the PANI@Co 3 O 4 electrode than that in the Co 3 O 4 . Two‐sets of BSH devices are fabricated using PANI@Co 3 O 4 as a positive electrode and mesoporous carbon (MC) and activated carbon (AC) negative electrodes in an aqueous electrolyte and benchmarked with symmetric supercapacitors fabricated using the two carbons. The PANI@Co 3 O 4 //MC device showed nearly two‐fold higher specific energy ( E S ) than that of PANI@Co 3 O 4 //AC. Interestingly, AC//AC symmetric supercapacitors showed two‐fold higher E S than the MC//MC device. Origin of differences in the charge storage behavior of the two types of devices are systematically analyzed and reported.