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Different Enhancement Mechanisms of the Anodizing Al‐Doped or Sn‐Coupled Ti 3 SiC 2 for the Photoelectrochemical Performance
Author(s) -
Yin Hongfeng,
Wang Zhiwei,
Tang Yun,
Chourashiya Muralidhar,
Li Xiuting,
Yuan Hudie,
Yan Nan,
Ren Xiaohu
Publication year - 2020
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.201904493
Subject(s) - materials science , photocurrent , anodizing , doping , optoelectronics , capacitance , absorption (acoustics) , aluminium , metallurgy , chemistry , composite material , electrode
TiO 2 ‐based photoanodes are very well known for their photoresponse performance, however, their inability to work in the visible range is still a challenge. To tackle this issue, Al‐doped or Sn‐coupled Ti 3 SiC 2 (Al‐TSC or Sn‐TSC) is fabricated via a hot‐press sintering technique, and the anodized Al‐TSC or Sn‐TSC is abbreviated as Al‐ATSC or Sn‐ATSC. The Al‐ATSC or Sn‐ATSC with optimized doping content of Al or Sn corresponding to a superior photocurrent of 137.24 μA cm −2 or 126.76 μA cm −2 which is 18 or 16 times higher than that of the anodized Ti 3 SiC 2 (ATSC) (7.6 μA cm −2 ) respectively. The capacitance for Al‐ATSC or Sn‐ATSC samples can be improved in the presence of visible light illumination. Enhanced photoelectrochemical (PEC) mechanism for Al‐ATSC is that generated defects in Al doped TiO 2 (Al‐TiO 2 ) improve the visible light absorption capacity, for Sn‐ATSC is the suppressed recombination of hole‐electron pairs by the coupling effect of SnO 2 /TiO 2 .