Realization of Visible Light Photocatalysis by Wide Band Gap Pure SnO 2 and Study of In 2 O 3 Sensitization Porous SnO 2 Photolysis Catalyst

SnO 2 is a wide band gap semiconductor which has no photocatalysis under visible light. In this study, the disordered porous SnO 2 precursor was constructed which showed obvious photocatalysis under visible light irradiation. Its degradation rate to RhB was 51.66% after 100 min, and the amount of hydrogen produced could reach 11.13 mmol⋅g −1 after 3.5 h under visible light irradiation. And then, In 2 O 3 was used as sensitizer to increase the specific surface area of porous SnO 2 matrix. The specific surface area of porous SnO 2 was increased from 167.355 m 2 ⋅g −1 to 544.394 m 2 ⋅g −1 when the doping amount of In 2 O 3 was 1.5 wt.%. The photocatalytic properties of the porous SnO 2 matrix was also vastly increased. The highest photocatalytic activity was observed for the In 2 O 3 /SnO 2 ‐1.5 sample, the degradation rate of RhB was 93.50% after 100 min which was 1.85 times of the SnO 2 matrix, and the hydrogen production rate could reach 21.51 mmol⋅g −1 after 3.5 h which was 1.94 times of the SnO 2 matrix under visible light irradiation. The catalyst had a much higher stability which could be recycled utilize.