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Synthesis, Characterization and Photo Response Behaviour of InSe and CuInSe 2 Nanostructures Using Tris(5‐methyl‐2‐pyridylselenolato)indium(III) as Molecular Precursor
Author(s) -
Karmakar Gourab,
Tyagi Adish,
Wadawale Amey,
Kedarnath Gotluru ,
Srivastava Amit P. ,
Betty Chirayath. A. ,
Singh Vishal
Publication year - 2018
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.201801653
Subject(s) - tetragonal crystal system , band gap , indium , materials science , nanostructure , spectroscopy , crystal structure , crystallography , phase (matter) , diffuse reflectance infrared fourier transform , crystal (programming language) , heteronuclear molecule , analytical chemistry (journal) , chemistry , nanotechnology , nuclear magnetic resonance spectroscopy , stereochemistry , optoelectronics , organic chemistry , physics , quantum mechanics , computer science , programming language , photocatalysis , catalysis
Abstract This report presents the synthesis of organoselenium compound {SeC 5 H 3 (Me‐5)N} 2 ( 1 ) and corresponding derivative of In(III), [In{SeC 5 H 3 (Me‐5)N} 3 ] ( 2 ) and their characterization by elemental analysis, heteronuclear NMR ( 1 H, 13 C, 77 Se) spectroscopy and single crystal X‐ray diffraction. The utilization of In(III) complex as molecular precursor has been demonstrated for the preparation of rare cubic phase of InSe. The complex has also been used for the preparation of tetragonal CuInSe 2 . The crystal structure, phase purity, morphology and elemental composition of these nanostructures were evaluated by powder X‐ray diffraction and electron microscopic techniques. The effect of increase in temperature is manifested in the increase of particle size of InSe and morphological variation from sheet to polygon in case of CuInSe 2 . The optical band gap of the nanostructures as deduced from diffuse reflectance spectroscopy (DRS) found to be in the range 1.84‐1.75 eV for InSe and 1.99‐1.78 eV for CuInSe 2 which are optimum for solar energy harvesting. The band gap values are blue shifted relative to their respective bulk counterparts indicating quantum confinement effect in the nanostructures. Both InSe and CuInSe 2 nanostructures showed photo response with faster switching characteristics which makes them promising candidate for alternative low cost photon absorber material.