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Gallium‐Induced Perturbation of Zinc Selenide Quantum Dots Electronics
Author(s) -
Ndangili Peter M.,
Masikini Milua,
Feleni Usisipho,
Douman Samantha,
Tovide Oluwakemi,
Williams Avril,
Baker Priscilla,
Iwuoha Emmanuel I.
Publication year - 2017
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.201700748
Subject(s) - gallium , materials science , quantum dot , doping , zinc selenide , gallium nitride , selenide , optoelectronics , nanotechnology , metallurgy , selenium , layer (electronics)
A rare cationic chemistry of Ga III has been used to modulate the optical and electrochemical properties of selenide quantum dots. Three different types of 3‐mercaptopropionic acid (3MPA)‐capped quantum dots (ZnSe‐3MPA, Ga 2 Se 3 ‐3MPA and Ga‐doped ZnSe‐3MPA) were synthesized in highly basic aqueous media (pH = 12.12) at room temperature. Three‐dimensional emission‐excitation matrix spectra (3D EEM), as well as, the ultraviolet visible spectroscopic bands of the Ga‐doped ZnSe‐3MPA were similar to the average values obtained for ZnSe‐3MPA and Ga 2 Se 3 ‐3MPA. Electrochemical studies revealed that gallium‐induced vacancies caused a significant enhancement in the conductivity of the Ga‐doped ZnSe‐3MPA compared to the conductivity of a mixture of ZnSe‐3MPA and Ga 2 Se 3 ‐3MPA.