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Enhanced Field Emission Characteristics of a 3D Hierarchical HfO 2 ‐ZnO Heteroarchitecture
Author(s) -
Shisode Raju T.,
Suryawanshi Sachin R.,
Mistari Chetan D.,
Late Dattatray J.,
More Mahendra A.
Publication year - 2017
Publication title -
chemistryselect
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 34
ISSN - 2365-6549
DOI - 10.1002/slct.201601723
Subject(s) - materials science , field electron emission , common emitter , current density , cathode , optoelectronics , nanorod , hydrothermal circulation , coating , nanotechnology , pulsed laser deposition , chemical engineering , thin film , electron , chemistry , physics , quantum mechanics , engineering
Three dimensional (3D) HfO 2 ‐ZnO heteroarchitecture comprised of thin coating of HfO 2 on self assembled 3D ZnO urchins with pointed apex has been synthesized using hydrothermal route followed by Pulsed Laser Deposition (PLD). The as‐synthesized HfO 2 ‐ZnO heteroarchitecture was characterized using XRD, SEM, EDS, and (HR) TEM, in order to reveal its structural, morphological, and chemical properties. The HfO 2 ‐ZnO heteroarchitecture emitter exhibits superior field emission (FE) behaviour in contrast to the pristine ZnO urchins, demonstrated by delivery of high emission current density of ∼ 885 μA/cm 2 at an applied field of ∼ 3.35 V/μm, against ∼383 μA/cm 2 at an applied field of ∼ 4.32 V/μm for the pristine ZnO urchins emitter. Interestingly, the HfO 2 ‐ZnO heteroarchitecture emitter exhibits excellent emission current stability characterized with fewer fluctuations, owing to very good ion‐bombardment resistance offered by the HfO 2 coating. Furthermore, the heteroarchitecture thus obtained facilitates tailoring of the morphology with high aspect ratio and modulation of electronic properties as well, thereby enhancing the FE behaviour.Despite HfO 2 being wide band gap and high‐k material, the HfO 2 ‐ZnO heteroarchitecture exhibits potential as promising candidate for fabrication of high current density cold cathode