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Probing the ex situ morphology of Ge islands on Si(001): AFM and XPS inelastic peak shape analysis
Author(s) -
Cohen Simonsen A.,
Tougaard S.,
Hansen J. L.,
Nylandsted Larsen A.
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.981
Subject(s) - x ray photoelectron spectroscopy , morphology (biology) , substrate (aquarium) , atomic force microscopy , analytical chemistry (journal) , materials science , in situ , silicon , chemistry , nanotechnology , nuclear magnetic resonance , optoelectronics , physics , oceanography , organic chemistry , chromatography , biology , genetics , geology
The dependence of morphology on growth temperature for Ge islands on Si(001) is studied ex situ using XPS inelastic peak shape analysis and atomic force microscopy (AFM). A systematic study is performed with temperatures of 200 °C, 550 °C and 700 °C and Ge nominal coverages of 5, 10 and 20 Å. By peak shape analysis of the Ge 2p and Si KLL spectra, islanding is found and the average island morphology is characterized quantitatively. The island morphology shows systematic trends with both temperature and Ge coverage. At fixed Ge dosage, increasing substrate temperature leads to taller and narrower islands, whereas for fixed temperatures both the island height and width increase with increasing Ge dosage. By AFM, the island morphology is resolved laterally and the size distribution of islands is found to depend strongly on temperature. Correlating the AFM and XPS results shows that they are complementary and consistent. Oxidation of the nanostructures is investigated by core‐level chemical shifts and the in‐depth distribution of oxygen is determined. There is substantial Ge oxidation and essentially no Si oxide is found. Copyright © 2001 John Wiley & Sons, Ltd.