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High spatial resolution extended x‐ray emission fine structure (EXEFS) spectra of an electronic device measured by electron probe microanalysis (EPMA)
Author(s) -
Kawai Jun,
Takahashi Hideyuki
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.965
Subject(s) - xanes , spectral line , electron microprobe , emission spectrum , silicon , spectrometer , microanalysis , analytical chemistry (journal) , resolution (logic) , x ray , electron , chemistry , materials science , optics , physics , mineralogy , optoelectronics , organic chemistry , chromatography , astronomy , artificial intelligence , computer science , quantum mechanics
Silicon K x‐ray emission spectra of a model electronic device are measured using a commercial electron probe microanalyser equipped with a wavelength‐dispersive spectrometer. Extended x‐ray emission fine structure (EXEFS) is observed at the low‐energy side of the K x‐ray emission diagram lines. The EXEFS spectra are known to be similar to the XANES (x‐ray absorption near‐edge structure) spectra. The measured silicon K x‐ray EXEFS spectra are compared with Si, SiC, Si 3 N 4 and SiO 2 EXEFS spectra. The EXEFS spectra at two places on the electronic devices are different from each other; one is similar to the spectrum of SiO 2 and the other is the sum of SiO 2 and Si. These results correspond well to the multilayer structure of the measured points. The present results demonstrate that a high spatial resolution chemical‐state analysis is possible using the XANES‐like EXEFS spectra. Copyright © 2001 John Wiley & Sons, Ltd.
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