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Backscattering correction for AES spectra measured at oblique (>45°) incidence of primary electron beam
Author(s) -
Shimotsuma Y.,
Ichimura S.
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.963
Subject(s) - extrapolation , monte carlo method , computational physics , inelastic mean free path , spectral line , angle of incidence (optics) , incidence (geometry) , electron , optics , chemistry , physics , atomic physics , mean free path , statistics , nuclear physics , mathematics , astronomy
The validity of matrix corrections on an AES analysis for incident angles θ (measured from the surface normal) of >45° was examined. The correction factors to take into account were the atomic density correction factor ( N ), the electron backscattering correction factor ( R ) and the inelastic mean free path (λ). The backscattering correction factor at large incidence angles was estimated by extrapolation from the factors for θ < 45°, which have been reported based on Monte‐Carlo simulations. The validity of the extrapolation was checked using pure Au and Cu samples used in the measurements of AES intensity dependence on the angle of incidence. This present approach then was applied to the quantitative analysis of Si 3 N 4 samples for a large incident angles. It was confirmed that the proposed matrix correction method is more accurate than the conventional one based on the use of sensitivity factors. Copyright © 2001 John Wiley & Sons, Ltd.